Design of large bandwidth voltage follower using CMOS 45nm technology

Abstract

CMOS Voltage follower plays critical role in designing of analog and signal circuits. In the previous conventional voltage followers the area requirement is more and more power dissipation on silicon on insulator which results change in output voltage swing. In this paper it was proposed a modified Voltage follower which is utilized to expand the transmission capacity and slew rate. The proposed strategy has 59-MHz data transmission, 21.4-V/µs slew rate with a load capacitance of 20pf. By this proposed technique maximum current and higher transmission capacity is achieved than the standard voltage follower with 1.8-Nano Watt DC power dissipation. This is conveyed by Tanner EDA 45nm CMOS Technology.